Recent advancements in spintronics have opened a new avenue in terahertz
(THz) radiation sources that may outperform the traditional contact-based
metallic counterparts. Inspired by the generation of broadband spintronic THz
signals at the interface of a ferromagnet and ultrawide bandgap semiconductors,
here we investigated the generation of THz radiation from micro-structured
heterostructures of a metallic ferromagnet (Ni80Fe20) and an ultrawide bandgap
semiconductor (AlGaN/GaN) that contains a layer of 2D electron gas. By
precisely tailoring the dimension of the subwavelength pillars of a THz device,
the micro-structured spintronic THz emitter can achieve up to more than three
times higher emission intensity compared to that of the un-patterned
counterpart. Our study advances the development of the next generation of
spintronic THz sources that allow a tailored emission frequency and intensity
control and, further, are compatible with existing integrated wide-bandgap
semiconductor circuits.

Este artículo explora los viajes en el tiempo y sus implicaciones.

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